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On January 29, 2011, Microsoft announced Windows Server 2008 R2 as the recommended version of . Windows 7 Ultimate USB Stick Edition - Portable - 32 Bit.torrent Download Windows 7 Ultimate USB Stick Edition Portable 32 Bit with Torrents for Free. Windows 7 Enterprise USB Stick Edition - Portable - 32 Bit.torrent The final version of Windows 7 Ultimate, which contains the final version of Windows 7 Enterprise, has been released in mid-2014. After the release of Windows 8.1, Microsoft has modified the Windows 7 media creation tool, Windows Media Creator, to integrate installation to USB media. The license of Windows 7 Enterprise and Windows 7 Ultimate includes the rights of perpetual use on both licensed computers and upgradable copies of licensed computers. Windows 10 Enterprise USB Stick Edition - Portable - 32 Bit.torrent The final version of Windows 10 Enterprise, which contains the final version of Windows 10 Enterprise, has been released in late 2015. You can set a portable device as a boot source and boot Windows 10 using a portable device that has been set as a boot source. See also Bootable CD Microsoft Windows Windows To Go Windows virtual machine References External links Category:Microsoft Windows Category:Windows media creation software1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device. 2. Description of the Related Art Semiconductor devices including transistors are used in a variety of electronic equipment. In particular, a typical MOS-type transistor includes a source region, a drain region, a channel region, a gate electrode, and a gate oxide film. In addition, the transistor operates by accumulating charges in the gate electrode and the channel region and applying a voltage to the gate electrode and thus attracting carriers from the source region and the drain region into the channel region due to the resulting potential difference. In the MOS transistor, the source and the drain regions are provided near the top surface of a semiconductor substrate while the channel region is provided along the semiconductor substrate. Accordingly, the distance between the source region and the drain region and the distance between the source region and the channel region are decreased, thereby providing a high driving force. However, as a result of a smaller channel area, a source-drain electric field concentration is increased at the drain region, which causes an 1cb139a0ed
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